2SK3669(TE16L1,NQ)

MOSFET N-CH 100V 10A PW-MOLD

Manufacturer Toshiba MPN 2SK3669(TE16L1,NQ) SPQ 2000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
-Drain to Source Voltage (Vdss)	100V
-Current - Continuous Drain (Id) @ 25°C	10A (Ta)
-Gate Charge (Qg) @ Vgs	8nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id	5V @ 1mA
-Input Capacitance (Ciss) @ Vds	480pF @ 10V
-Rds On (Max) @ Id, Vgs	125 mOhm @ 5A, 10V
-Power - Max	20W
-Supplier Device Package	PW-MOLD
-Standard Package	2,000
-Packaging	Tape & Reel (TR)
-Family	FETs - Single
-Mounting Type	Surface Mount