2SK3313(Q)

MOSFET N-CH 500V 12A TO220NIS

Manufacturer Toshiba MPN 2SK3313(Q) SPQ 50 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	TO-220-3 Full Pack
-Drain to Source Voltage (Vdss)	500V
-Standard Package	50
-Current - Continuous Drain (Id) @ 25掳C	12A (Ta)
-FET Type	MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id	4V @ 1mA
-Input Capacitance (Ciss) @ Vds	2040pF @ 10V
-Rds On (Max) @ Id, Vgs	620 mOhm @ 6A, 10V
-Power - Max	40W
-Supplier Device Package	TO-220NIS
-Gate Charge (Qg) @ Vgs	45nC @ 10V
-Packaging	Bulk
-Family	FETs - Single
-Mounting Type	Through Hole