2SK3309(Q)

MOSFET N-CH 450V 10A TO220FL

Manufacturer Toshiba MPN 2SK3309(Q) SPQ 50 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	TO-220-3, Short Tab
-Drain to Source Voltage (Vdss)	450V
-Standard Package	50
-Current - Continuous Drain (Id) @ 25掳C	10A (Ta)
-FET Type	MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id	5V @ 1mA
-Input Capacitance (Ciss) @ Vds	920pF @ 10V
-Rds On (Max) @ Id, Vgs	650 mOhm @ 5A, 10V
-Power - Max	65W
-Supplier Device Package	TO-220FL
-Gate Charge (Qg) @ Vgs	23nC @ 10V
-Packaging	Tube
-Family	FETs - Single
-Mounting Type	Through Hole