2SK2777(TE24L,Q)

MOSFET N-CH 600V 6A TO-220SM

制造商 Toshiba 制造商零件编号 2SK2777(TE24L,Q) 标准包装 1000 ECCN -- Schedule B -- RoHS -- 规格说明书 --

询价

需求数量		目标价格
联系电话		姓名
公司		邮箱

产品参数

-FET Feature	Logic Level Gate
-Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
-Drain to Source Voltage (Vdss)	600V
-Current - Continuous Drain (Id) @ 25°C	6A (Ta)
-Gate Charge (Qg) @ Vgs	30nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id	4V @ 1mA
-Input Capacitance (Ciss) @ Vds	1300pF @ 10V
-Rds On (Max) @ Id, Vgs	1.25 Ohm @ 3A, 10V
-Power - Max	65W
-Supplier Device Package	TO-220SM
-Standard Package	1,000
-Packaging	Tape & Reel (TR)
-Family	FETs - Single
-Mounting Type	Surface Mount