2SK2719(F)

MOSFET N-CH 900V 3A TO-3PN

Manufacturer Toshiba MPN 2SK2719(F) SPQ 50 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	TO-3P-3, SC-65-3
-Drain to Source Voltage (Vdss)	900V
-Current - Continuous Drain (Id) @ 25°C	3A (Ta)
-Gate Charge (Qg) @ Vgs	25nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id	4V @ 1mA
-Input Capacitance (Ciss) @ Vds	750pF @ 25V
-Rds On (Max) @ Id, Vgs	4.3 Ohm @ 1.5A, 10V
-Power - Max	125W
-Supplier Device Package	TO-3P(N)
-Standard Package	50
-Packaging	Tube
-Family	FETs - Single
-Mounting Type	Through Hole