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2SK1930(TE24L,Q)

MOSFET N-CH 1000V 4A TO220SM

Manufacturer Toshiba
MPN 2SK1930(TE24L,Q)
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Standard
-Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
-Drain to Source Voltage (Vdss) 1000V (1kV)
-Current - Continuous Drain (Id) @ 25°C 4A (Ta)
-Gate Charge (Qg) @ Vgs 60nC @ 10V
-FET Type MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id 3.5V @ 1mA
-Input Capacitance (Ciss) @ Vds 700pF @ 25V
-Rds On (Max) @ Id, Vgs 3.8 Ohm @ 2A, 10V
-Power - Max 100W
-Supplier Device Package TO-220SM
-Standard Package   1,000
-Packaging   Tape & Reel (TR)  
-Family FETs - Single
-Mounting Type Surface Mount

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