2SK1119(F)

MOSFET N-CH 1000V 4A TO-220AB

Manufacturer Toshiba MPN 2SK1119(F) SPQ 50 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	TO-220-3
-Drain to Source Voltage (Vdss)	1000V (1kV)
-Current - Continuous Drain (Id) @ 25°C	4A (Ta)
-Gate Charge (Qg) @ Vgs	60nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id	3.5V @ 1mA
-Input Capacitance (Ciss) @ Vds	700pF @ 25V
-Rds On (Max) @ Id, Vgs	3.8 Ohm @ 2A, 10V
-Power - Max	100W
-Supplier Device Package	TO-220AB
-Standard Package	50
-Packaging	Tube
-Family	FETs - Single
-Mounting Type	Through Hole