2SJ681(Q)

MOSFET P-CH 60V 5A PW-MOLD

Manufacturer Toshiba MPN 2SJ681(Q) SPQ 200 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
-Drain to Source Voltage (Vdss)	60V
-Current - Continuous Drain (Id) @ 25°C	5A (Ta)
-Gate Charge (Qg) @ Vgs	15nC @ 10V
-FET Type	MOSFET P-Channel, Metal Oxide
-Vgs(th) (Max) @ Id	2V @ 1mA
-Input Capacitance (Ciss) @ Vds	700pF @ 10V
-Rds On (Max) @ Id, Vgs	170 mOhm @ 2.5A, 10V
-Power - Max	20W
-Supplier Device Package	PW-MOLD2
-Standard Package	200
-Packaging	Bulk
-Family	FETs - Single
-Mounting Type	Through Hole