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2SJ661-DL-1E

MOSFET P-CH 60V 38A

Manufacturer onsemi
MPN 2SJ661-DL-1E
SPQ 800
ECCN --
Schedule B --
RoHS --
Datasheet 2SJ661-DL-1E.pdf

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Product parameter

-Packaging: Reel
-Minimum Operating Temperature: - 55 C
-Technology: Si
-Vgs th - Gate-Source Threshold Voltage: - 2.6 V
-Vgs - Gate-Source Voltage: +/- 20 V
-Number of Channels: 1 Channel
-Typical Turn-On Delay Time: 33 ns
-Series: 2SJ661
-Factory Pack Quantity: 800
-Brand: ON Semiconductor
-RoHS:  Details
-Id - Continuous Drain Current: - 38 A
-Rise Time: 285 ns
-Maximum Operating Temperature: + 150 C
-Rds On - Drain-Source Resistance: 29.5 mOhms
-Pd - Power Dissipation: 65 W
-Package / Case: TO-263-4
-Configuration: 1 P-Channel
-Mounting Style: SMD/SMT
-Fall Time: 195 ns
-Manufacturer: ON Semiconductor
-Transistor Polarity: P-Channel
-Channel Mode: Enhancement
-Typical Turn-Off Delay Time: 295 ns
-Product Category: MOSFET
-Vds - Drain-Source Breakdown Voltage: - 60 V
-Transistor Type: 1 P-Channel

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