2SJ378(TP,Q)

MOSFET P-CH 60V 5A TPS

Manufacturer Toshiba MPN 2SJ378(TP,Q) SPQ 2000 ECCN -- Schedule B -- RoHS -- Datasheet --

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-FET Feature	Logic Level Gate
-Package / Case	TO-220-3 No Tab
-Drain to Source Voltage (Vdss)	60V
-Current - Continuous Drain (Id) @ 25°C	5A (Ta)
-Gate Charge (Qg) @ Vgs	22nC @ 10V
-FET Type	MOSFET P-Channel, Metal Oxide
-Vgs(th) (Max) @ Id	2V @ 1mA
-Input Capacitance (Ciss) @ Vds	630pF @ 10V
-Rds On (Max) @ Id, Vgs	190 mOhm @ 2.5A, 10V
-Power - Max	1.3W
-Supplier Device Package	TPS
-Standard Package	2,000
-Packaging	Tape & Box (TB)
-Family	FETs - Single
-Mounting Type	Through Hole