2SJ304(F)

MOSFET P-CH 60V 14A TO220NIS

Manufacturer Toshiba MPN 2SJ304(F) SPQ 50 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	TO-220-3 Full Pack
-Drain to Source Voltage (Vdss)	60V
-Current - Continuous Drain (Id) @ 25°C	14A (Ta)
-Gate Charge (Qg) @ Vgs	45nC @ 10V
-FET Type	MOSFET P-Channel, Metal Oxide
-Vgs(th) (Max) @ Id	2V @ 1mA
-Input Capacitance (Ciss) @ Vds	1200pF @ 10V
-Rds On (Max) @ Id, Vgs	120 mOhm @ 7A, 10V
-Power - Max	40W
-Supplier Device Package	TO-220NIS
-Standard Package	50
-Packaging	Bulk
-Family	FETs - Single
-Mounting Type	Through Hole