2N7334

MOSFET 4N-CH 100V 1A MO-036AB

Manufacturer Microchip Technology MPN 2N7334 SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	14-DIP (0.300", 7.62mm)
-Drain to Source Voltage (Vdss)	100V
-Current - Continuous Drain (Id) @ 25°C	1A
-Gate Charge (Qg) @ Vgs	60nC @ 10V
-FET Type	4 N-Channel
-Vgs(th) (Max) @ Id	4V @ 250µA
-Rds On (Max) @ Id, Vgs	700 mOhm @ 600mA, 10V
-Power - Max	1.4W
-Supplier Device Package	MO-036AB
-Standard Package	1
-Packaging	Bulk
-Family	FETs - Arrays
-Mounting Type	Through Hole