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2N7002ET3G

MOSFET N-CH 60V 260MA SOT-23

Manufacturer onsemi
MPN 2N7002ET3G
SPQ 10000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case TO-236-3, SC-59, SOT-23-3
-PCN Obsolescence/ EOL Multiple Devices 21/Jan/2010
-Supplier Device Package SOT-23-3 (TO-236)
-Standard Package   10,000
-PCN Design/Specification Copper Wire 26/May/2009
-FET Type MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id 2.5V @ 250µA
-Input Capacitance (Ciss) @ Vds 26.7pF @ 25V
-Rds On (Max) @ Id, Vgs 2.5 Ohm @ 240mA, 10V
-Power - Max 300mW
-Drain to Source Voltage (Vdss) 60V
-Current - Continuous Drain (Id) @ 25°C 260mA (Ta)
-Gate Charge (Qg) @ Vgs 0.81nC @ 5V
-Packaging   Tape & Reel (TR)  
-Family FETs - Single
-Mounting Type Surface Mount

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