2N7000,126

MOSFET N-CH 60V 300MA TO-92

Manufacturer NXP Semiconductors MPN 2N7000,126 SPQ 2000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
-Drain to Source Voltage (Vdss)	60V
-Current - Continuous Drain (Id) @ 25°C	300mA (Tc)
-Packaging	Tape & Box (TB)
-Series	TrenchMOS™
-Vgs(th) (Max) @ Id	2V @ 1mA
-Input Capacitance (Ciss) @ Vds	40pF @ 10V
-Rds On (Max) @ Id, Vgs	5 Ohm @ 500mA, 10V
-Power - Max	830mW
-Supplier Device Package	TO-92-3
-Standard Package	2,000
-FET Type	MOSFET N-Channel, Metal Oxide
-Family	FETs - Single
-Mounting Type	Through Hole