2N6800

MOSFET N-CH 400V TO-205AF TO-39

Manufacturer Microchip Technology MPN 2N6800 SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	TO-205AF Metal Can
-Drain to Source Voltage (Vdss)	400V
-Current - Continuous Drain (Id) @ 25°C	3A (Tc)
-Gate Charge (Qg) @ Vgs	5.75nC @ 10V
-FET Type	MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id	4V @ 250µA
-Rds On (Max) @ Id, Vgs	1 Ohm @ 2A, 10V
-Power - Max	800mW
-Supplier Device Package	TO-39
-Standard Package	1
-Packaging	Bulk
-Family	FETs - Single
-Mounting Type	Through Hole