2N6788U

MOSFET N-CH 100V 18LCC

Manufacturer Microchip Technology MPN 2N6788U SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Standard
-Package / Case	18-BQFN Exposed Pad
-Drain to Source Voltage (Vdss)	100V
-Standard Package	1
-Current - Continuous Drain (Id) @ 25掳C	4.5A (Tc)
-FET Type	MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id	4V @ 250碌A
-Rds On (Max) @ Id, Vgs	300 mOhm @ 3.5A, 10V
-Power - Max	800mW
-Supplier Device Package	18-ULCC (9.14x7.49)
-Gate Charge (Qg) @ Vgs	18nC @ 10V
-Packaging	Bulk
-Family	FETs - Single
-Mounting Type	Surface Mount