2N6661JTVP02

MOSFET N-CH 90V 860MA TO-205

Manufacturer Vishay MPN 2N6661JTVP02 SPQ 20 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-FET Feature	Logic Level Gate
-Package / Case	TO-205AD, TO-39-3 Metal Can
-Drain to Source Voltage (Vdss)	90V
-Current - Continuous Drain (Id) @ 25°C	860mA (Tc)
-Packaging	Tube
-Family	FETs - Single
-Mounting Type	Through Hole
-Rds On (Max) @ Id, Vgs	4 Ohm @ 1A, 10V
-Power - Max	725mW
-Supplier Device Package	TO-39
-Standard Package	20
-FET Type	MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id	2V @ 1mA
-Input Capacitance (Ciss) @ Vds	50pF @ 25V