2N5639G

JFET N-CH 35V 310MW TO92

Manufacturer onsemi MPN 2N5639G SPQ 1000 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-Package / Case	TO-226-3, TO-92-3 (TO-226AA)
-Voltage - Breakdown (V(BR)GSS)	35V
-PCN Obsolescence/ EOL	Multiple Devices 21/Jun/2007
-Supplier Device Package	TO-92-3
-Resistance - RDS(On)	60 Ohm
-FET Type	N-Channel
-Mounting Type	Through Hole
-Power - Max	310mW
-Current - Drain (Idss) @ Vds (Vgs=0)	25mA @ 20V
-Drain to Source Voltage (Vdss)	30V
-Standard Package	1,000
-Packaging	Bulk
-Family	JFETs (Junction Field Effect)
-Input Capacitance (Ciss) @ Vds	10pF @ 12V (VGS)