| -Minimum Operating Temperature: |
- 65 C |
| -Collector- Base Voltage VCBO: |
36 V |
| -Pd - Power Dissipation: |
70 W |
| -Package / Case: |
M113 |
| -Configuration: |
Single Dual Emitter |
| -Emitter- Base Voltage VEBO: |
4 V |
| -DC Current Gain hFE Max: |
20 at 250 mA at 5 V |
| -Continuous Collector Current: |
8 A |
| -Manufacturer: |
STMicroelectronics |
| -Transistor Polarity: |
NPN |
| -Brand: |
STMicroelectronics |
| -Product Category: |
RF Bipolar Transistors |
| -Type: |
RF Bipolar Power |
| -Maximum Operating Temperature: |
+ 150 C |
| -Packaging: |
Bulk |
| -Width: |
6.48 mm |
| -Technology: |
Si |
| -Height: |
7.11 mm |
| -Mounting Style: |
SMD/SMT |
| -Maximum DC Collector Current: |
8 A |
| -Length: |
24.89 mm |
| -DC Collector/Base Gain hfe Min: |
20 |
| -Series: |
SD1275 |
| -Factory Pack Quantity: |
25 |
| -RoHS: |
Details |
| -Collector- Emitter Voltage VCEO Max: |
16 V |
| -Transistor Type: |
Bipolar Power |
