NUS5530MNR2G

Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor

制造商 onsemi 制造商零件编号 NUS5530MNR2G 标准包装 1 ECCN -- Schedule B -- RoHS -- 规格说明书 NUS5530MNR2G.pdf

SP1027库存 美元价格 $1.61495 人民币价格 ￥10.97859 库存类型 SP1027 库存数量 62860 阶梯价格 数量 价格 360+ $1.61495 500+ $1.45328 1000+ $1.34044 10000+ $1.19505 100000+ $1.0013

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产品参数

-Rds On - Drain-Source Resistance:	200 Ohms
-Packaging:	Reel
-Manufacturer:	ON Semiconductor
-Transistor Polarity:	P-Channel
-Technology:	Si
-RoHS:	Details
-Product Category:	MOSFET
-Vds - Drain-Source Breakdown Voltage:	- 20 V
-Unit Weight:	0.001319 oz
-Forward Transconductance - Min:	12 S
-Product:	MOSFET Small Signal
-Pd - Power Dissipation:	635 mW
-Factory Pack Quantity:	3000
-Brand:	ON Semiconductor
-Package / Case:	DFN-8
-Id - Continuous Drain Current:	- 3.9 A
-Vgs - Gate-Source Voltage:	- 35 V
-Mounting Style:	SMD/SMT