NUS5530MNR2G

Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor

Manufacturer onsemi MPN NUS5530MNR2G SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet NUS5530MNR2G.pdf

SP1027 Dollar $1.61107 RMB ￥13.38098 Stock type SP1027 Stock num 24000 Stepped num price 361+ $1.61107 500+ $1.45003 1000+ $1.33703 10000+ $1.19211 100000+ $0.99882

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Product parameter

-Rds On - Drain-Source Resistance:	200 Ohms
-Packaging:	Reel
-Manufacturer:	ON Semiconductor
-Transistor Polarity:	P-Channel
-Technology:	Si
-RoHS:	Details
-Product Category:	MOSFET
-Vds - Drain-Source Breakdown Voltage:	- 20 V
-Unit Weight:	0.001319 oz
-Forward Transconductance - Min:	12 S
-Product:	MOSFET Small Signal
-Pd - Power Dissipation:	635 mW
-Factory Pack Quantity:	3000
-Brand:	ON Semiconductor
-Package / Case:	DFN-8
-Id - Continuous Drain Current:	- 3.9 A
-Vgs - Gate-Source Voltage:	- 35 V
-Mounting Style:	SMD/SMT