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1N916B_T50R

DIODE GEN PURP 100V 200MA DO35

Manufacturer onsemi
MPN 1N916B_T50R
SPQ 30000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Operating Temperature - Junction -65°C ~ 175°C
-Capacitance @ Vr, F 2pF @ 0V, 1MHz
-Supplier Device Package DO-35
-PCN Packaging Marking Format 15/Aug/2008
-Diode Type Standard
-Reverse Recovery Time (trr) 4ns
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 100V
-Current - Average Rectified (Io) 200mA
-Package / Case DO-204AH, DO-35, Axial
-Standard Package   30,000
-Packaging   Tape & Reel (TR)  
-Speed Small Signal =< 200mA (Io), Any Speed
-Current - Reverse Leakage @ Vr 5µA @ 75V
-Mounting Type Through Hole
-Voltage - Forward (Vf) (Max) @ If 1V @ 20mA

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