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1N5621

DIODE GEN PURP 800V 1A AXIAL

Manufacturer Microchip Technology
MPN 1N5621
SPQ 100
ECCN ECL99
Schedule B --
RoHS --
Datasheet 1N5621.pdf

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Product parameter

-Operating Temperature - Junction -65°C ~ 175°C
-Capacitance @ Vr, F 20pF @ 12V, 1MHz
-Supplier Device Package *
-Packaging   Bulk  
-Speed Fast Recovery =< 500ns, > 200mA (Io)
-Current - Reverse Leakage @ Vr 500nA @ 800V
-Mounting Type Through Hole
-Voltage - Forward (Vf) (Max) @ If 1.6V @ 3A
-Current - Average Rectified (Io) 1A
-Package / Case A, Axial
-Standard Package   1
-Diode Type Standard
-Reverse Recovery Time (trr) 300ns
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 800V
-ECCN ECL99

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