1N5402T-G

DIODE GEN PURP 200V 3A DO201AD

制造商 Comchip Technology 制造商零件编号 1N5402T-G 标准包装 1200 ECCN -- Schedule B -- RoHS -- 规格说明书 1N5402T-G.pdf

询价

需求数量		目标价格
联系电话		姓名
公司		邮箱

产品参数

-Operating Temperature - Junction	-65°C ~ 125°C
-Package / Case	DO-201AD, Axial
-Standard Package	1,200
-Diode Type	Standard
-Current - Reverse Leakage @ Vr	5µA @ 200V
-Mounting Type	Through Hole
-Voltage - Forward (Vf) (Max) @ If	1V @ 3A
-Current - Average Rectified (Io)	3A
-Supplier Device Package	DO-27 (DO-201AD)
-Packaging	Tape & Box (TB)
-Speed	Standard Recovery >500ns, > 200mA (Io)
-Family	Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max)	200V