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1N5189US

DIODE GEN PURP 500V 3A D5B

Manufacturer Microchip Technology
MPN 1N5189US
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet 1N5189US.pdf

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Product parameter

-Operating Temperature - Junction -65°C ~ 175°C
-Package / Case E-MELF
-Standard Package   1
-Diode Type Standard
-Reverse Recovery Time (trr) 300ns
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 500V
-Current - Average Rectified (Io) 3A
-Supplier Device Package D-5B
-Packaging   Bulk  
-Speed Fast Recovery =< 500ns, > 200mA (Io)
-Current - Reverse Leakage @ Vr 2µA @ 500V
-Mounting Type Surface Mount
-Voltage - Forward (Vf) (Max) @ If 1.5V @ 9A

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