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1N5186

DIODE GEN PURP 100V 3A AXIAL

Manufacturer Microchip Technology
MPN 1N5186
SPQ 125
ECCN --
Schedule B --
RoHS --
Datasheet 1N5186.pdf

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Product parameter

-Operating Temperature - Junction -65°C ~ 175°C
-Package / Case B, Axial
-Packaging   Bulk  
-Speed Fast Recovery =< 500ns, > 200mA (Io)
-Current - Reverse Leakage @ Vr 2µA @ 100V
-Mounting Type Through Hole
-Voltage - Forward (Vf) (Max) @ If 1.5V @ 9A
-Current - Average Rectified (Io) 3A
-Standard Package   1
-Diode Type Standard
-Reverse Recovery Time (trr) 150ns
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 100V

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