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1N4006B-G

DIODE GEN PURP 800V 1A DO41

Manufacturer Comchip Technology
MPN 1N4006B-G
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet 1N4006B-G.pdf

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Product parameter

-Operating Temperature - Junction -55°C ~ 150°C
-Capacitance @ Vr, F 15pF @ 4V, 1MHz
-Supplier Device Package DO-41
-Packaging   Bulk  
-Speed Standard Recovery >500ns, > 200mA (Io)
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 800V
-Current - Average Rectified (Io) 1A
-Package / Case DO-204AL, DO-41, Axial
-Standard Package   1,000
-Diode Type Standard
-Current - Reverse Leakage @ Vr 5µA @ 800V
-Mounting Type Through Hole
-Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A

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