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1N4003B-G

DIODE GEN PURP 200V 1A DO41

制造商 Comchip Technology
制造商零件编号 1N4003B-G
标准包装 1000
ECCN --
Schedule B --
RoHS --
规格说明书 1N4003B-G.pdf

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产品参数

-Operating Temperature - Junction -55°C ~ 150°C
-Capacitance @ Vr, F 15pF @ 4V, 1MHz
-Supplier Device Package DO-41
-Diode Type Standard
-Category Discrete Semiconductor Products
-Current - Reverse Leakage @ Vr 5µA @ 200V
-Mounting Type Through Hole
-Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A
-Current - Average Rectified (Io) 1A
-Package / Case DO-204AL, DO-41, Axial
-Part Status Active
-Speed Standard Recovery >500ns, > 200mA (Io)
-Manufacturer Comchip Technology
-Family Diodes - Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 200V
-Packaging Bulk

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