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1N3070_T50R

DIODE GEN PURP 200V 500MA DO35

Manufacturer onsemi
MPN 1N3070_T50R
SPQ 30000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Operating Temperature - Junction 175°C (Max)
-Capacitance @ Vr, F 5pF @ 0V, 1MHz
-Supplier Device Package DO-35
-Packaging   Tape & Reel (TR)  
-Speed Fast Recovery =< 500ns, > 200mA (Io)
-Current - Reverse Leakage @ Vr 100nA @ 175V
-Mounting Type Through Hole
-Voltage - Forward (Vf) (Max) @ If 1V @ 100mA
-Current - Average Rectified (Io) 500mA
-Package / Case DO-204AH, DO-35, Axial
-Standard Package   30,000
-Diode Type Standard
-Reverse Recovery Time (trr) 50ns
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 200V

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