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TPS1101D

TPS1101D , P沟道 MOSFET 晶体管, 2.3 A, Vds=15 V, 8针 SOIC封装

Manufacturer Texas Instruments
MPN TPS1101D
SPQ 75
ECCN --
Schedule B --
RoHS RoHS Compliant
Datasheet TPS1101D.pdf
SP1027
Dollar $2.5575
RMB ¥21.24169
Stock type SP1027
Stock num 4500
Stepped
num price
228+ $2.5575
500+ $2.44125
1000+ $2.30563

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 15V
-Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
-FET Type MOSFET P-Channel, Metal Oxide
-Family FETs - Single
-Vgs(th) (Max) @ Id 1.5V @ 250µA
-RoHS Lead free / RoHS Compliant
-Rds On (Max) @ Id, Vgs 90 mOhm @ 2.5A, 10V
-Power - Max 791mW
-Supplier Device Package 8-SOIC
-Gate Charge (Qg) @ Vgs 11.25nC @ 10V
-Online Catalog P-Channel Logic Level Gate FETs
-Mounting Type Surface Mount
-Packaging Tube  

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