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BPW76A

850 nm ±40° Sensitivity 70 V 50 mA Through Hole NPN Phototransistor - TO-18

Manufacturer Vishay
MPN BPW76A
SPQ 1000
ECCN EAR99
Schedule B --
RoHS --
Datasheet BPW76A.pdf
SP1034
Dollar $9.72402
RMB ¥80.76429
Stock type SP1034
Stock num 1655
Stepped
num price
250+ $9.72402
500+ $9.51473
SP1034
Dollar $6.41937
RMB ¥53.31703
Stock type SP1034
Stock num 1655
Stepped
num price
1000+ $6.41937
2000+ $6.29083
4000+ $6.16517
SP1027
Dollar $3.58438
RMB ¥29.7706
Stock type SP1027
Stock num 1000
Stepped
num price
1000+ $3.58438

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Product parameter

-Width: 5.5 mm
-Light Current: 0.8 mA
-Packaging: Bulk
-Collector-Emitter Breakdown Voltage: 70 V
-Pd - Power Dissipation: 250 mW
-Package / Case: TO-18
-Mounting Style: Through Hole
-Manufacturer: Vishay
-Factory Pack Quantity: 1000
-RoHS:  Details
-Collector- Emitter Voltage VCEO Max: 80 V
-Type: Chip
-Wavelength: 850 nm
-Collector-Emitter Saturation Voltage: 0.15 V
-Product: Phototransistors
-Maximum On-State Collector Current: 50 mA
-Minimum Operating Temperature: - 40 C
-Half Intensity Angle Degrees: 40 deg
-Height: 5.2 mm
-Length: 5.5 mm
-Peak Wavelength: 850 nm
-Brand: Vishay Semiconductors
-Product Category: Phototransistors
-Dark Current: 100 nA
-Maximum Operating Temperature: + 125 C
-ECCN EAR99

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