| -Width: |
25.07 mm |
| -Rds On - Drain-Source Resistance: |
65 mOhms |
| -Pd - Power Dissipation: |
700 W |
| -Tradename: |
HyperFET |
| -Height: |
9.6 mm |
| -Vgs - Gate-Source Voltage: |
30 V |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
18 ns |
| -Length: |
38.2 mm |
| -Manufacturer: |
IXYS |
| -Transistor Polarity: |
N-Channel |
| -Channel Mode: |
Enhancement |
| -Typical Turn-Off Delay Time: |
70 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
500 V |
| -Transistor Type: |
1 N-Channel |
| -ECCN |
EAR99 |
| -Packaging: |
Tube |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Package / Case: |
SOT-227-4 |
| -Configuration: |
Single Dual Source |
| -Unit Weight: |
1.340411 oz |
| -Number of Channels: |
1 Channel |
| -Typical Turn-On Delay Time: |
25 ns |
| -Forward Transconductance - Min: |
70 S |
| -Series: |
IXFN80N50 |
| -Factory Pack Quantity: |
10 |
| -Brand: |
IXYS |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
66 A |
| -Rise Time: |
27 ns |
| -Maximum Operating Temperature: |
+ 150 C |
