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GT60N321(Q)

IGBT 1000V 60A 170W TO3P LH

Manufacturer Toshiba
MPN GT60N321(Q)
SPQ 100
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Current - Collector Pulsed (Icm) 120A
-Power - Max 170W
-Td (on/off) @ 25°C 330ns/700ns
-Part Status Obsolete
-Manufacturer Toshiba Semiconductor and Storage
-Voltage - Collector Emitter Breakdown (Max) 1000V
-Mounting Type Through Hole
-Input Type Standard
-Package / Case TO-3PL
-Supplier Device Package TO-3P(LH)
-Current - Collector (Ic) (Max) 60A
-Category Discrete Semiconductor Products
-Reverse Recovery Time (trr) 2.5µs
-Family Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
-Packaging Tube

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