| -Packaging: |
Bulk |
| -P1dB - Compression Point: |
29 dBm |
| -Minimum Operating Temperature: |
- 65 C |
| -Technology: |
GaAs |
| -NF - Noise Figure: |
1.1 dB |
| -Mounting Style: |
SMD/SMT |
| -Maximum Drain Gate Voltage: |
- 5 V to + 1 V |
| -Forward Transconductance - Min: |
2294 mmho |
| -Factory Pack Quantity: |
100 |
| -RoHS: |
Details |
| -Product Category: |
RF JFET Transistors |
| -Vds - Drain-Source Breakdown Voltage: |
7 V |
| -Type: |
GaAs EpHEMT |
| -Operating Frequency: |
2 GHz |
| -Product: |
RF JFET |
| -Pd - Power Dissipation: |
2.25 W |
| -Package / Case: |
SOT-89 |
| -Configuration: |
Single |
| -Unit Weight: |
0.004603 oz |
| -Gain: |
15.5 dB |
| -Manufacturer: |
Broadcom Limited |
| -Brand: |
Broadcom / Avago |
| -Vgs - Gate-Source Breakdown Voltage: |
- 5 V to 0.8 V |
| -Id - Continuous Drain Current: |
1 A |
| -Transistor Type: |
EpHEMT |
| -Maximum Operating Temperature: |
+ 150 C |
