| -Rds On - Drain-Source Resistance: |
1.2 Ohms |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Vgs th - Gate-Source Threshold Voltage: |
4.4 V |
| -Vgs - Gate-Source Voltage: |
30 V |
| -Mounting Style: |
Through Hole |
| -Fall Time: |
11 ns |
| -Forward Transconductance - Min: |
3 S |
| -Series: |
TK5A60D |
| -Factory Pack Quantity: |
50 |
| -Typical Turn-Off Delay Time: |
60 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
600 V |
| -Transistor Type: |
1 N-Channel |
| -Qg - Gate Charge: |
16 nC |
| -Pd - Power Dissipation: |
35 W |
| -Package / Case: |
TO-220-3 |
| -Configuration: |
Single |
| -Unit Weight: |
0.211644 oz |
| -Number of Channels: |
1 Channel |
| -Typical Turn-On Delay Time: |
40 ns |
| -Manufacturer: |
Toshiba |
| -Transistor Polarity: |
N-Channel |
| -Brand: |
Toshiba |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
5 A |
| -Rise Time: |
20 ns |
| -Maximum Operating Temperature: |
+ 150 C |
