| -FET Feature |
Standard |
| -Package / Case |
TO-220-3 Full Pack, Isolated Tab |
| -Drain to Source Voltage (Vdss) |
120V |
| -Current - Continuous Drain (Id) @ 25°C |
42A (Tc) |
| -Part Status |
Active |
| -Manufacturer |
Toshiba Semiconductor and Storage |
| -Family |
Transistors - FETs, MOSFETs - Single |
| -Mounting Type |
Through Hole |
| -Input Capacitance (Ciss) @ Vds |
3100pF @ 60V |
| -Rds On (Max) @ Id, Vgs |
9.4 mOhm @ 21A, 10V |
| -Power - Max |
35W |
| -Supplier Device Package |
TO-220SIS |
| -Gate Charge (Qg) @ Vgs |
52nC @ 10V |
| -Category |
Discrete Semiconductor Products |
| -FET Type |
MOSFET N-Channel, Metal Oxide |
| -Vgs(th) (Max) @ Id |
4V @ 1mA |
| -Operating Temperature |
150°C (TJ) |
| -Packaging |
Tube |
