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MRF586

TRANS RF BIPO 1W 200MA TO39

制造商 Advanced Semiconductor, Inc.
制造商零件编号 MRF586
标准包装 1
ECCN --
Schedule B --
RoHS --
规格说明书 MRF586.pdf

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产品参数

-Frequency - Transition 3GHz
-Power - Max 1W
-Transistor Type NPN
-Current - Collector (Ic) (Max) 200mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 17V
-Mounting Type Through Hole
-Packaging Bulk
-Package / Case TO-205AD, TO-39-3 Metal Can
-Gain 13.5dB
-Supplier Device Package TO-39
-Part Status Active
-Manufacturer Microsemi Corporation
-Family Transistors - Bipolar (BJT) - RF
-DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA, 5V

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