| -Product: |
Power MOSFET Modules |
| -Packaging: |
Bulk |
| -Minimum Operating Temperature: |
- 40 C |
| -Tradename: |
POWER MOS 7 |
| -Vgs th - Gate-Source Threshold Voltage: |
3 V |
| -Configuration: |
Single |
| -Mounting Style: |
Screw |
| -Fall Time: |
41 ns |
| -Length: |
73.4 mm |
| -Transistor Polarity: |
N-Channel |
| -Brand: |
Microsemi |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
26 A |
| -Rise Time: |
17 ns |
| -Width: |
40.8 mm |
| -Rds On - Drain-Source Resistance: |
140 mOhms |
| -Pd - Power Dissipation: |
208 W |
| -Package / Case: |
SP-32 |
| -Height: |
11.5 mm |
| -Vgs - Gate-Source Voltage: |
30 V |
| -Number of Channels: |
1 Channel |
| -Typical Turn-On Delay Time: |
10 ns |
| -Manufacturer: |
Microsemi |
| -Factory Pack Quantity: |
50 |
| -Typical Turn-Off Delay Time: |
50 ns |
| -Product Category: |
Discrete Semiconductor Modules |
| -Vds - Drain-Source Breakdown Voltage: |
500 V |
| -Maximum Operating Temperature: |
+ 150 C |
