BPW96B

BPW96 Series 850 nm ± 20° Through Hole Silicon NPN Phototransistor - T-1 3/4

Manufacturer Vishay MPN BPW96B SPQ 1 ECCN EAR99 Schedule B -- RoHS -- Datasheet BPW96B.pdf

SP1027 Dollar $1.44305 RMB ￥11.98547 Stock type SP1027 Stock num 475 Stepped num price 281+ $1.44305 SP1034 Dollar $1.59938 RMB ￥13.28389 Stock type SP1034 Stock num 50 Stepped num price 25+ $1.59938 250+ $1.56436 500+ $1.53058 SP1034 Dollar $1.56436 RMB ￥12.99302 Stock type SP1034 Stock num 275 Stepped num price 250+ $1.56436 500+ $1.53058 SP1034 Dollar $1.07532 RMB ￥8.93123 Stock type SP1034 Stock num 275 Stepped num price 1000+ $1.07532 2000+ $1.04854 4000+ $1.03247

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Product parameter

-Width:	5.75 mm
-Collector-Emitter Saturation Voltage:	0.3 V
-Packaging:	Bulk
-Maximum On-State Collector Current:	50 mA
-Peak Wavelength:	850 nm
-Minimum Operating Temperature:	- 40 C
-Brand:	Vishay Semiconductors
-Half Intensity Angle Degrees:	20 deg
-Product Category:	Phototransistors
-Height:	8.6 mm
-Type:	Chip
-Wavelength:	850 nm
-ECCN	EAR99
-Lens Color/Style:	Clear
-Product:	Phototransistors
-Length:	5.75 mm
-Manufacturer:	Vishay
-Pd - Power Dissipation:	150 mW
-Factory Pack Quantity:	4000
-RoHS:	Details
-Package / Case:	T-1 3/4
-Collector- Emitter Voltage VCEO Max:	70 V
-Dark Current:	200 nA
-Mounting Style:	Through Hole
-Maximum Operating Temperature:	+ 100 C