| -FET Feature |
Logic Level Gate |
| -Package / Case |
SC-100, SOT-669, 4-LFPAK |
| -Power - Max |
194W |
| -Supplier Device Package |
LFPAK56, Power-SO8 |
| -Gate Charge (Qg) @ Vgs |
35.5nC @ 5V |
| -Online Catalog |
N-Channel Logic Level Gate FETs |
| -Family |
FETs - Single |
| -Vgs(th) (Max) @ Id |
2.1V @ 1mA |
| -Packaging |
Tape & Reel (TR) |
| -FET Feature |
Logic Level Gate |
| -Package / Case |
SC-100, SOT-669, 4-LFPAK |
| -Power - Max |
194W |
| -Supplier Device Package |
LFPAK56, Power-SO8 |
| -Standard Package |
1 |
| -Packaging |
Cut Tape (CT) |
| -Online Catalog |
N-Channel Logic Level Gate FETs |
| -Family |
FETs - Single |
| -Mounting Type |
Surface Mount |
| -ECCN |
ECL99 |
| -Rds On (Max) @ Id, Vgs |
2.5 mOhm @ 25A, 10V |
| -PCN Assembly/Origin |
TrenchMOS Silicon Process 19/Sep/2014 Wafer Fab Site Transfer 15/Dec/2014 |
| -Drain to Source Voltage (Vdss) |
40V |
| -Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
| -FET Type |
MOSFET N-Channel, Metal Oxide |
| -Series |
TrenchMOS™ |
| -Mounting Type |
Surface Mount |
| -Input Capacitance (Ciss) @ Vds |
5962pF @ 25V |
| -RoHS |
Lead free / RoHS Compliant |
| -Rds On (Max) @ Id, Vgs |
2.5 mOhm @ 25A, 10V |
| -PCN Assembly/Origin |
TrenchMOS Silicon Process 19/Sep/2014 Wafer Fab Site Transfer 15/Dec/2014 |
| -Drain to Source Voltage (Vdss) |
40V |
| -Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
| -Gate Charge (Qg) @ Vgs |
35.5nC @ 5V |
| -FET Type |
MOSFET N-Channel, Metal Oxide |
| -Series |
TrenchMOS™ |
| -Vgs(th) (Max) @ Id |
2.1V @ 1mA |
| -Input Capacitance (Ciss) @ Vds |
5962pF @ 25V |
