HN1B01F-Y(TE85L,F)

HN1B01F-Y(TE85L,F), 双 NPN，PNP 双极晶体管, 150 / -150 mA, Vce=50 / -50 V, HFE:120, 120 (PNP) MHz，150 (NPN) MHz, 6针 SM封装

Manufacturer Toshiba MPN HN1B01F-Y(TE85L,F) SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
-Package / Case	SC-74, SOT-457
-Transistor Type	NPN, PNP
-Standard Package	1
-Packaging	Digi-Reel®
-Family	Transistors (BJT) - Arrays
-Current - Collector Cutoff (Max)	100nA (ICBO)
-Frequency - Transition	120MHz
-Power - Max	300mW
-Supplier Device Package	SM6
-Current - Collector (Ic) (Max)	150mA
-Voltage - Collector Emitter Breakdown (Max)	50V
-Mounting Type	Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA, 6V