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NX3020NAKV,115

SOT666/30 V, 200 mA dual N-channel Trench MOSFET/12NC:934067068115

Manufacturer Nexperia
MPN NX3020NAKV,115
SPQ 4000
ECCN --
Schedule B --
RoHS RoHS Compliant
Datasheet NX3020NAKV,115.pdf

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Product parameter

-FET Feature Logic Level Gate
-Package / Case SOT-563, SOT-666
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 200mA
-FET Type 2 N-Channel (Dual)
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 48pF @ 10V
-RoHS Lead free / RoHS Compliant
-Rds On (Max) @ Id, Vgs 4.5 Ohm @ 100mA, 10V
-Power - Max 375mW
-Supplier Device Package SOT-666
-Standard Package   4,000
-Packaging   Tape & Reel (TR)  
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 4.5 Ohm @ 100mA, 10V
-Power - Max 375mW
-Supplier Device Package SOT-666
-Gate Charge (Qg) @ Vgs 0.44nC @ 4.5V
-Family FETs - Arrays
-Vgs(th) (Max) @ Id 1.5V @ 250µA
-Packaging Digi-Reel®  
-FET Feature Logic Level Gate
-Package / Case SOT-563, SOT-666
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 200mA
-Gate Charge (Qg) @ Vgs 0.44nC @ 4.5V
-FET Type 2 N-Channel (Dual)
-Vgs(th) (Max) @ Id 1.5V @ 250µA
-Input Capacitance (Ciss) @ Vds 48pF @ 10V

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