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BT151X-650C,127

THYRISTOR 650V 12A TO-220F

制造商 NXP Semiconductors
制造商零件编号 BT151X-650C,127
标准包装 5000
ECCN --
Schedule B --
RoHS --
规格说明书 BT151X-650C,127.pdf

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产品参数

-Gate Trigger Voltage - Vgt: 1.5 V
-Packaging: Tube
-Manufacturer: NXP
-Maximum Gate Peak Inverse Voltage: 5 V
-Brand: NXP Semiconductors
-Off-State Leakage Current @ VDRM IDRM: 0.5 mA
-Package / Case: TO-220F
-Current Rating: 7.5 A
-Type: SCRs
-Vf - Forward Voltage: 1.75 V
-Rated Repetitive Off-State Voltage VDRM: 650 V
-Holding Current Ih Max: 20 mA
-Factory Pack Quantity: 1000
-Non Repetitive On-State Current: 110 A
-Gate Trigger Current - Igt: 15 mA
-RoHS:  Details
-Product Category: SCRs
-Unit Weight: 0.127339 oz
-Mounting Style: Through Hole
-Maximum Operating Temperature: + 125 C

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