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PMGD280UN,115

PMGD280UN Series 20 V 660 mOhm 0.89 nC 0.4 W Dual N-Channel SMT MOSFET - SOT-363

Manufacturer NXP Semiconductors
MPN PMGD280UN,115
SPQ 3000
ECCN ECL99
Schedule B --
RoHS --
Datasheet PMGD280UN,115.pdf

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 6-TSSOP, SC-88, SOT-363
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 870mA
-PCN Packaging Lighter Reels 02/Jan/2014
-PCN Design/Specification Resin Hardener 02/Jul/2013
-FET Type 2 N-Channel (Dual)
-Series TrenchMOS™
-Vgs(th) (Max) @ Id 1V @ 250µA
-Input Capacitance (Ciss) @ Vds 45pF @ 20V
-Rds On (Max) @ Id, Vgs 340 mOhm @ 200mA, 4.5V
-Power - Max 400mW
-Supplier Device Package 6-TSSOP
-Standard Package   3,000
-Gate Charge (Qg) @ Vgs 0.89nC @ 4.5V
-Packaging   Tape & Reel (TR)  
-Online Catalog N-Channel Logic Level Gate FETs
-Family FETs - Arrays
-Mounting Type Surface Mount
-ECCN ECL99

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