| -Noise Figure (dB Typ @ f) |
2.5dB @ 100MHz |
| -Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| -Gain |
23dB |
| -Supplier Device Package |
S-Mini |
| -Part Status |
Active |
| -Manufacturer |
Toshiba Semiconductor and Storage |
| -Family |
Transistors - Bipolar (BJT) - RF |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
70 @ 1mA, 6V |
| -Frequency - Transition |
550MHz |
| -Power - Max |
100mW |
| -Transistor Type |
NPN |
| -Current - Collector (Ic) (Max) |
20mA |
| -Category |
Discrete Semiconductor Products |
| -Voltage - Collector Emitter Breakdown (Max) |
30V |
| -Mounting Type |
Surface Mount |
| -Packaging |
Tape & Reel (TR) |
