English 简体中文 日本語

PBLS2002S,115

TRANS NPN PREBIAS/PNP 1.5W 8SO

Manufacturer NXP Semiconductors
MPN PBLS2002S,115
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet --

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
-Resistor - Base (R1) (Ohms) 4.7k
-Power - Max 1.5W
-PCN Obsolescence/ EOL Multiple Devices 01/Jul/2014
-Supplier Device Package 8-SO
-Packaging   Tape & Reel (TR)  
-Voltage - Collector Emitter Breakdown (Max) 50V, 20V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V / 150 @ 2A, 2V
-Frequency - Transition 100MHz
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Transistor Type 1 NPN Pre-Biased, 1 PNP
-Resistor - Emitter Base (R2) (Ohms) 4.7k
-Standard Package   1,000
-Current - Collector (Ic) (Max) 100mA, 3A
-Family Transistors (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 1µA, 100nA

Copyright © 1997-2013 NetEase. All Rights Reserved.