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PBLS2003S,115

TRANS NPN PREBIAS/PNP 1.5W 8SO

Manufacturer NXP Semiconductors
MPN PBLS2003S,115
SPQ 1000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Resistor - Base (R1) (Ohms) 10k
-Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
-Power - Max 1.5W
-Resistor - Emitter Base (R2) (Ohms) 10k
-Current - Collector (Ic) (Max) 100mA, 3A
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V, 20V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V / 150 @ 2A, 2V
-Frequency - Transition 100MHz
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Transistor Type 1 NPN Pre-Biased, 1 PNP
-Supplier Device Package 8-SO
-Part Status Obsolete
-Manufacturer NXP Semiconductors
-Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 1µA, 100nA
-Packaging Digi-Reel®

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