| -Product: |
RF JFET |
| -Packaging: |
Ammo Pack |
| -Minimum Operating Temperature: |
- 65 C |
| -Technology: |
Si |
| -Height: |
5.2 mm |
| -Unit Weight: |
0.016000 oz |
| -Gate-Source Cutoff Voltage: |
5 V to 10 V |
| -Length: |
4.8 mm |
| -Transistor Polarity: |
P-Channel |
| -Brand: |
NXP Semiconductors |
| -RoHS: |
Details |
| -Product Category: |
RF JFET Transistors |
| -Vds - Drain-Source Breakdown Voltage: |
30 V |
| -Type: |
JFET |
| -Width: |
4.2 mm |
| -Rds On - Drain-Source Resistance: |
85 Ohms |
| -Pd - Power Dissipation: |
300 mW |
| -Package / Case: |
TO-92 |
| -Configuration: |
Single |
| -Mounting Style: |
Through Hole |
| -Maximum Drain Gate Voltage: |
30 V |
| -Manufacturer: |
NXP |
| -Factory Pack Quantity: |
10000 |
| -Part # Aliases: |
AMO J174 |
| -Vgs - Gate-Source Breakdown Voltage: |
30 V |
| -Id - Continuous Drain Current: |
135 mA |
| -Transistor Type: |
JFET |
| -Maximum Operating Temperature: |
+ 150 C |
