| BSD840N H6327 | ||
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| 产品描述：
MOSFET 2N-CH 20V 0.88A SOT363
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Width: | 1.25 mm |
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| Rds On - Drain-Source Resistance: | 270 mOhms, 270 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 550 mV |
| Configuration: | Dual |
| Unit Weight: | 0.000265 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 1.9 ns |
| Forward Transconductance - Min: | 2.5 S |
| Series: | BSD840 |
| Factory Pack Quantity: | 3000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 7.8 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V, 20 V |
| Transistor Type: | 2 N-Channel |
| Packaging: | Reel |
| Qg - Gate Charge: | 260 pC |
| Pd - Power Dissipation: | 500 mW |
| Package / Case: | SOT-363-6 |
| Height: | 0.9 mm |
| Vgs - Gate-Source Voltage: | +/- 8 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 900 ps |
| Length: | 2 mm |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BSD840NH6327XT BSD840NH6327XTSA1 SP000917654 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 880 mA, 880 mA |
| Rise Time: | 2.2 ns |
| Maximum Operating Temperature: | + 150 C |
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