| CSD25310Q2 | ||
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| 产品描述：
SON 6/I°/20-V P-Channel NexFET Power MOSFET
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| 标准包装：3000 | ||
| 数据手册： | ||
| ECAD模型:
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| Packaging: | Reel |
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| Qg - Gate Charge: | 3.6 nC |
| Pd - Power Dissipation: | 2.9 W |
| Tradename: | NexFET |
| Vgs th - Gate-Source Threshold Voltage: | - 850 mV |
| Vgs - Gate-Source Voltage: | - 8 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 8 ns |
| Manufacturer: | Texas Instruments |
| Transistor Polarity: | P-Channel |
| Brand: | Texas Instruments |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 9.6 A |
| Rise Time: | 15 ns |
| Maximum Operating Temperature: | + 85 C |
| Rds On - Drain-Source Resistance: | 23.9 mOhms |
| Minimum Operating Temperature: | - 40 C |
| Technology: | Si |
| Package / Case: | WSON-FET-6 |
| Configuration: | Single Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 34 S |
| Series: | CSD25310Q2 |
| Factory Pack Quantity: | 3000 |
| Typical Turn-Off Delay Time: | 15 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 20 V |
| Transistor Type: | 1 P-Channel |
| 数据手册： |
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