| CSD85301Q2T | ||
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| 产品描述：
MOSFET 2N-CH 20V 5A 6WSON
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| 标准包装：250 | ||
| 数据手册： -- | ||
| ECAD模型:
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- 规格参数
- 产品特性
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| FET Feature | Logic Level Gate, 5V Drive |
|---|---|
| Package / Case | 6-WDFN Exposed Pad |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Part Status | Active |
| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 5A, 4.5V |
| Power - Max | 2.3W |
| Supplier Device Package | 6-WSON (2x2) |
| Gate Charge (Qg) @ Vgs | 5.4nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | 2 N-Channel (Dual) |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 469pF @ 10V |
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